AOD446 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD446
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD446 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V_DS (V) = 75V
I_D = 10 A (V_GS = 20V)
R_DS(ON) < 130 mΩ (V_GS = 20V)
R_DS(ON) < 140 mΩ (V_GS = 10V)
R_DS(ON) < 165 mΩ (V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
75
±25
10
10
20
10
15
20
10
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
17.4
50
4
Max
30
60
7.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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