AOD434 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD434
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD434 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V V^GS(MAX) rating. It is ESD protected to
a 2KV HBM rating. Standard Product AOD434 is Pb-free (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical.
Features
V_DS (V) = 20V
I_D = 18A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 16mΩ (V_GS = 4.5V)
R_DS(ON) < 21mΩ (V_GS = 2.5V)
R_DS(ON) < 30mΩ (V_GS = 1.8V)
ESD Rating: 2KV HBM
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
18
18
30
18
37
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1.9
2.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/4
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