AOD422 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AOD422, AOD422L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD422 uses advanced trench technology to provide excellent R^{DS(ON) , low gate charge and}
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package.
Features
V_DS (V) = 20V
I_D = 10 A
R_DS(ON) < 22mΩ (V_GS = 4.5V)
R_DS(ON) < 26mΩ (V_GS = 2.5V)
R_DS(ON) < 34mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
10
10
30
15
26
50
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
16.7
40
1.9
Max
25
50
2.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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