AOD421 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transisto

AOD421
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD421 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD
protected.
Features
V_DS (V) = -20V
I_D = -12.5 A (V_GS = -10V)
R_DS(ON) < 75mΩ (V_GS = -10V)
R_DS(ON) < 95mΩ (V_GS = -4.5V)
R_DS(ON) < 145mΩ (V_GS = -2.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^G
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±12
-12.5
-8.9
-30
18.8
9.4
2
1.33
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
23
50
28
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
6
8
Units
V
V
A
W
W
°C
Units
°C/W
°C/W
°C/W
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