AOD4186 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4186
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for low voltage inverter applications.
Features
V_DS (V) =40V
I_D = 35A
R_DS(ON) < 15mΩ
R_DS(ON) < 19mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
35
27
70
10
8
24
29
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case
Steady-State
R_θJC
2.5
3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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