AOD4184 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – Plastic Encapsulated Device

AOD4184/AOI4184
40V N-Channel MOSFET
General Description
The AOD4184/AOI4184 used advanced trench technology and design to provide excellent R_DS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current
load applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
40V
50A
< 8mΩ
< 11mΩ
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
50
40
120
6.5
5
35
61
50
25
2.3
1.5
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
18
44
Maximum Junction-to-Case
Steady-State
R_θJC
2.4
Max
22
55
3
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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