AOD4136 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM POWER Transistor

AOD4136
N-Channel SDMOS^TM POWER Transistor
General Description
The AOD4136 is fabricated with SDMOS^TM trench technology that combines excellent R_DS(ON) with low
gate charge. The result is outstanding efficiency with controlled switching behavior. This universal
technology is well suited for both DC-DC and load switch applications.
Features
V_DS (V) = 25V
I_D = 25A
(V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 10V)
R_DS(ON) <19mΩ (V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^B,H
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±20
25
20
100
17
15
30
15
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Junction-to-Ambient ^A,G
t ≤ 10s
Steady-State
Symbol
R_θJA
Typ
17.4
50
Max
25
60
Maximum Junction-to-Case ^F
Steady-State
R_θJC
4
5
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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