AOD4120 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4120
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4120 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V_DS (V) = 20V
I_D = 25A (VGS = 10V)
R_DS(ON) <18 mΩ (V_GS = 10V)
R_DS(ON) <25 mΩ (VGS = 4.5V)
R_DS(ON) <75 mΩ (V_GS = 2.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±16
25
19
75
13
25
33
16.7
2.5
1.7
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
17
40
25
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
3.6
4.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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