AOD412 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD412
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.
Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green
Product ordering option. AOD412 and AOD412L are electrically identical.
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 7.0mΩ (V_GS = 10V)
R_DS(ON) < 10.5mΩ (V_GS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
65
200
30
120
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
39
20
50
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
0.8
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn