AOD403 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD403
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD403 uses advanced trench technology to provide excellent RDS(ON) ^{, low gate charge and low}
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications. Standard Product AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product ordering option. AOD403 and AOD403L are
electrically identical.
Features
V_DS (V) = -30V
I_D = -85A (V_GS = -20V)
R_DS(ON) < 6mΩ (V_GS = -20V)
R_DS(ON) < 7.6mΩ (V_GS = -10V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
G
S
Maximum
-30
±25
-85
-65
-200
-30
120
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
13
39
20
50
Maximum Junction-to-Case ^C
Steady-State
R_θJL
0.56
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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