AOD402 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD402
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, laod switching and general purpose applications.
Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD402L is a Green
Product ordering option. AOD402 and AOD402L are electrically identical.
Features
V_DS (V) = 30V
I_D = 18 A (V_GS = 20V)
R_DS(ON) < 15 mΩ (V_GS = 20V)
R_DS(ON) < 18 mΩ (V_GS = 10V)
RDS(ON) < 44 mΩ (V_GS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
GD S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±25
18
12
40
18
40
60
30
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1.9
2.5
Units
°C/W
°C/W
°C/W
1/4
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