AOD2908 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOD2908
100V N-Channel MOSFET
General Description
The AOD2908 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an extremely
low combination of R_DS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100V
52A
< 13.5mΩ
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^I
I_DM
Pulsed Drain Current ^J
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
G
S
Maximum
100
±20
52
36
120
150
9
7
20
20
75
37
2.5
1.6
-55 to 175
Typ
Max
15
20
41
50
1.5
2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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