AOD200 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
36A
< 7.8mΩ
< 11mΩ
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
G
S
Maximum
30
±20
36
28
120
14
11
28
39
50
25
2.5
1.6
-55 to 175
Typ
Max
15
20
41
50
2.1
3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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