 English |
|
|
|
|
|
|
|
| AOC2802 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |||
| |||
|
AOC2802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AOC2802 uses advanced trench technology to provide excellent RSS(ON) , low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.It is ESD protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
Vss
ID (at VGS=4.5V)
RSS(ON) (at VGS=4.5V)
RSS(ON) (at VGS=4.0V)
RSS(ON) (at VGS=3.1V)
RSS(ON) (at VGS=2.5V)
20V
6A
< 34mâ¦
< 35mâ¦
< 43mâ¦
< 54mâ¦
WLCSP 1.57x1.57_4
Bottom View
G2
S2
G1
S1
Top View
Pin1(S1)
Equivalent Circuit
D1
D2
G1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
VSS
Gate-Source Voltage
Source Current (DC) Note1
Source Current (Pulse) Note2
TA=25°C
VGS
IS
ISM
Power Dissipation Note1 TA=25°C
Junction and Storage Temperature Range
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
PD
TJ, TSTG
S1
Maximum
20
±12
6
60
1.3
-55 to 150
S2
Units
V
V
A
W
°C
1/5
www.freescale.net.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese