AOC2800 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AOC2800
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AOC2800 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX)rating.It is ESD protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
Vss
I_D (at V_GS=4.5V)
R_SS(ON) (at V_GS=4.5V)
R_SS(ON) (at V_GS=4.0V)
R_SS(ON) (at V_GS=3.1V)
R_SS(ON) (at V_GS=2.5V)
30V
6A
< 42mΩ
< 44mΩ
< 49mΩ
< 61mΩ
WLCSP 1.57x1.57_4
Bottom View
G2
S2
G1
S1
Top View
Pin1(S1)
Equivalent Circuit
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
V_SS
Gate-Source Voltage
Source Current (DC) ^Note1
Source Current (Pulse) ^Note2
T_A=25°C
V_GS
I_S
I_SM
Power Dissipation ^Note1 _TA=25°C
Junction and Storage Temperature Range
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
P_D
T_J, T_STG
Maximum
30
±12
6
60
1.3
-55 to 150
Units
V
V
A
W
°C
1/5
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