AOC2411 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AOC2411
30V P-Channel MOSFET
General Description
The AOC2411 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
Features
Vds
-30V
I_D (at V_GS=-4.5V)
-3.4A
R_DS(ON) (at V_GS=-4.5V) < 45mΩ
R_DS(ON) (at V_GS=-2.5V) < 60mΩ
Bottom View
3
2
D
D
Top View
Equivalent Circuit
D
S
G
Pin1(G)
4
1
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Source Current (DC) ^Note1
Source Current (Pulse) ^Note2
V_GS
T_A=25°C I _D
I_SM
Power Dissipation ^Note1 _TA=25°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Maximum
-30
±12
-3.4
-52
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^Note1
Maximum Junction-to-Ambient ^Note1
t ≤ 5s
Steady-State
R_θJA
75
130
Maximum Junction-to-Foot(Drain)
Steady-State
R_θJF
16
Max
90
155
20
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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