AOB416 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB416
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOB416 uses advanced trench technology to provide excellent RDS(ON) ^{, shoot-through immunity}
and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core
power conversion. _{Standard Product AOB416 is Pb-} free (meets ROHS & Sony 259 specifications).
AOB416L is a Green Product ordering option. AOB416 and AOB416L are electrically identical.
Features
V_DS (V) = 30V
I_D = 110A (V_GS = 10V)
R_DS(ON) < 4.5mΩ (V_GS = 10V) @ 30A
R_DS(ON) < 6.5mΩ (V_GS = 4.5V) @ 30A
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
110
78
200
30
140
100
50
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
8.1
33
12
40
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
0.84
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/5
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