AOB2608L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AOT2608L/AOB2608L
60V N-Channel MOSFET
General Description
The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both conduction and switching power losses are minimized
due to an extremely low combination of R_DS(ON), Ciss and Coss.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
60V
72A
< 8.0mΩ (< 7.6mΩ^∗)
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
Maximum
60
±20
72
54
180
11
8.5
50
125
100
50
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
12
48
Maximum Junction-to-Case
Steady-State
R_θJC
1.2
Max
15
60
1.5
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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