AO9926E Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO9926E
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO9926E uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259
specifications). AO9926EL is a Green Product ordering option. AO9926E and AO9926EL are
Features
V_DS (V) = 20V
I_D = 8A (V_GS = 4.5V)
R_DS(ON) < 21mΩ (V_GS = 4.5V)
R_DS(ON) < 25mΩ (V_GS = 2.5V)
R_DS(ON) < 33mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
8
6.4
30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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