AO9926C Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Dual N-Channel MOSFET

AO9926C
20V Dual N-Channel MOSFET
General Description
The AO9926C uses advanced trench technology to provide excellent RDS(ON) _{, low gate charge and operation}
with gate voltages as low as 1.8V while retaining a 12V V_{GS(MAX) rating. This device is suitable for use as a uni-}
directional or bi-directional load switch.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS=2.5V)
R_DS(ON) (at V_GS=1.8V)
20V
7.6A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
SOIC-8
Top View
S2 1 8 D2
G2 _{2 7} D2
S1 ³ 6 D1
G1 ⁴
5
D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
7.6
6.1
38
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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