AO8830 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8830
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AO8830/L uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V V_{GS(MAX) rating. This device is suitable}
for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
AO8830 and AO8830L are electrically identical.
-RoHs Compliant
-AO8830L is Halogen Free
Features
V_DS (V) = 20V
I_D = 6 A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 37mΩ (V_GS = 3.1V)
R_DS(ON) < 41mΩ (V_GS = 2.5V)
R_DS(ON) < 55mΩ (V_GS = 1.8V)
TSSOP-8
Top View
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
D1
D2
1.6K
G1
1.6K
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
6
4.8
30
1.5
0.94
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
115
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
70
Max
83
140
85
Units
°C/W
°C/W
°C/W
1/5
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