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| AO8820 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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AO8820
20V Common-Drain Dual
N-Channel Mosfet
General Description
The AO8820 uses advanced trench technology to provide excellent R , DS(ON) low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use
as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=3.6V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
ESD protected!
20V
7A
< 21mâ¦
< 24mâ¦
< 28mâ¦
< 32mâ¦
< 50mâ¦
D1
D2
Top View
D1/D2 1
8 D1/D2
S1 2
7 S2
S1 3
6 S2
G1
G2
G1 4
5 G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
7
5.5
30
1.5
0.96
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
64
89
Maximum Junction-to-Lead
Steady-State
RθJL
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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