AO8818 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8818
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AO8818 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration. AO8818 is Pb-free (meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 7A (V_GS = 10V)
R_DS(ON) < 18mΩ (V_GS = 10V)
R_DS(ON) < 20mΩ (V_GS = 4.5V)
R_DS(ON) < 21mΩ (V_GS = 4V)
R_DS(ON) < 24mΩ (V_GS = 3.1V)
R_DS(ON) < 27mΩ (V_GS = 2.5V)
R_DS(ON) < 58mΩ (V_GS = 1.8V)
ESD Rating: 1500V HBM
TSSOP-8
Top View
D1
D2
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
7
5.5
30
1.5
0.96
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
64
89
Steady-State
R_θJL
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
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