AO8802 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable
for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
V_DS (V) = 20V
I_D = 8A
R_DS(ON) < 13mΩ (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 4.5V)
R_DS(ON) < 19mΩ (V_GS = 2.5V)
R^DS(ON) < 27mΩ (V_GS = 1.8V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
1
8
2
7
3
6
4
5
D1/D2
S2
S2
G2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
8
6.3
30
1.5
1.08
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
89
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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