AO8801 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO8801
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
It is ESD protected. _{Standard Product AO8801 is Pb-} free (meets ROHS & Sony 259 specifications).
Features
V_DS (V) = -20V
I_D = -4.7 A (V_GS = -4.5V)
R_DS(ON) < 42mΩ (V_GS = -4.5V)
R_DS(ON) < 53mΩ (V_GS = -2.5V)
R_DS(ON) < 70mΩ (V_GS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-4.7
-3.7
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
73
96
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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