AO8701 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO8701, AO8701L
P-Channel Enhancement Mode Field
Effect Transistor with Schcttky Diode
General Description
The AO8701 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the _{implementation of a bidirectional blocking switch.}
AO8701L ( Green Product ) is offered in a lead-free _package.
Features
V_DS (V) = -30V
I_D = -4.2A
R_DS(ON) < 50mΩ (V_GS = 10V)
R_DS(ON) < 65mΩ (V_GS = 4.5V)
R_DS(ON) < 120mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D1
S2
S3
G4
8K
7A
6A
5A
TSSOP-8
D
K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
Pulsed Forward Current^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Schottky
30
3
2
40
1.4
1
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
73
96
Maximum Junction-to-Lead^C
Steady-State
R_θJL
63
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
75
97
Maximum Junction-to-Lead^C
Steady-State
R_θJL
63
Max
Units
90
125
°C/W
75
90
125
°C/W
75
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