AO8403 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO8403
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD
protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are electrically identical.
Features
V_DS (V) = -20V
I_D = -4 A (V_GS = -4.5V)
R_DS(ON) < 42mΩ (V_GS = -4.5V)
R_DS(ON) < 52mΩ (V_GS = -2.5V)
R_DS(ON) < 70mΩ (V_GS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1
S2
S3
G4
8_D
7_S
6_S
5_D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
89
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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