AO7801 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Dual P-Channel Enhancement Mode Field Effect Transistor

AO7801
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7801 uses advanced trench technology to ^{provide excellent R}DS(ON) ^{, low gate charge, and}
operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. Standard Product AO7801 is Pb-free (meets ROHS & Sony 259
specifications). AO7801L is a Green Product ordering option. AO7801 and AO7801L are
electrically identical.
Features
V_DS (V) = -20V
I_D = -0.6A (VGS = -4.5V)
R_DS(ON) < 520mΩ (V_GS = -4.5V)
R_DS(ON) < 700mΩ (V_GS = -2.5V)
R_DS(ON) < 950mΩ (V_GS = -1.8V)
SC-70-6
(SOT-323)
Top View
D1
D2
S1
D1
G1
G2
D2
S2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-0.6
-0.48
-3
0.3
0.19
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
360
400
415
460
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
300
350
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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