AO7800 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO7800
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7800 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.It
is ESD protected.Standard Product AO7800 is Pb-free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option. AO7800 and AO7800L are electrically identical.
Features
V_DS (V) = 20V
I_D = 0.9 A (V_GS = 4.5V)
R_DS(ON) < 300mΩ (V_GS = 4.5V)
R_DS(ON) < 350mΩ (V_GS = 2.5V)
R_DS(ON) < 450mΩ (V_GS = 1.8V)
SC-70-6
(SOT-323)
Top View
S1
D1
G1
G2
D2
S2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
0.9
0.7
5
0.3
0.19
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
360
400
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
300
Max
415
460
350
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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