AO7412 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO7412
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7412 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
Standard Product AO7412 is Pb-free (meets ROHS & Sony 259 specifications). AO7412L is a Green
Product ordering option. AO7412 and AO7412L are electrically identical.
Features
V_DS (V) = 30V
I_D = 2.1 A (V_GS = 10V)
R_DS(ON) < 90mΩ (V_GS = 10V)
R_DS(ON) < 100mΩ (V_GS = 4.5V)
R_DS(ON) < 160mΩ (V_GS = 2.5V)
SC-70-6
(SOT-323)
Top View
D
D
D
D
G
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
2.1
1.7
10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
175
200
200
250
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
130
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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