AO7411 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO7411
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7411 uses advanced trench technology to provide excellent R_{DS(ON), low gate charge and}
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO7411 is Pb-free ^{(meets ROHS & Sony 259 specifications). AO7411L}
is a Green Product ordering option. AO7411 and AO7411L are electrically identical.
Features
V_DS (V) = -20V
I_D = -1.8 A (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -4.5V)
R_DS(ON) < 150mΩ (V_GS = -2.5V)
R_DS(ON) < 200mΩ (V_GS = -1.8V)
SC-70-6
(SOT 323)
Top View
D
D
D
D
G
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-1.8
-1.5
-10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
160
180
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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