AO7410 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO7410
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7410 uses advanced trench technology to provide excellent R_DS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO7410 is Pb-free ^{(meets ROHS & Sony 259 specifications). AO7410L}
is a Green Product ordering option. AO7410 and AO7410L are electrically identical.
Features
V_DS (V) = 30V
I_D = 1.6 A (V_GS = 10V)
R_DS(ON) < 90mΩ (V_GS = 10V)
R_DS(ON) < 100mΩ (V_GS = 4.5V)
R_DS(ON) < 175m_Ω (V_GS = 2.5V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
1.6
1.3
10
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
300
340
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
280
Max
360
425
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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