AO7403 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO7403, AO7403L
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7403 uses advanced trench technology to provide excellent RDS(ON) , low gate charge, and
operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. AO7403L (Green Poduct) is offered in a lead-free package.
Features
V_DS (V) = -20V
I_D = -0.7A
R_DS(ON) < 470mΩ (V_GS = -4.5V)
R_DS(ON) < 625mΩ (V_GS = -2.5V)
RDS(ON) < 900mΩ (V_GS = -1.8V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-0.7
-0.5
-3
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
300
350
360
425
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
280
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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