AO7402 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO7402
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO7402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It canbe used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC ^{converters. Standard Product AO7402 is Pb-free (meets ROHS}
& Sony 259 specifications). AO7402L is a Green Product ordering option. AO7402 and AO7402L are electrically
identical.
Features
V_DS (V) = 20V
I_D = 1.6 A (V_GS = 4.5V)
R_DS(ON) < 90mΩ (V_GS = 4.5V)
R_DS(ON) < 105mΩ (V_GS = 2.5V)
R_DS(ON) < 130mΩ (V_GS = 1.8V)
SC-70
(SOT-323)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
1.6
1.2
10
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
300
340
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
280
Max
360
425
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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