AO6810 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO6810
30V Dual N-Channel MOSFET
General Description
The AO6810 uses advanced trench technology to provide excellent R_{DS(ON) and low gate charge. This}
device is suitable for use as a load switch or in PWM applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
3.5A
< 50mΩ
< 70mΩ
Top View
D1
D2
G1 1 ₆ D1
S2 2 ₅ S1
G2 3 4 D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
3.5
3
20
1.15
0.73
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
78
106
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
110
150
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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