AO6801E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AO6801E
30V Dual P-Channel MOSFET
General Description
The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) _{. This device is ideal for load switch and battery protection applications.}
Features
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-2.5V)
Typical ESD protection
-30V
-2A
< 110mΩ
< 135mΩ
< 185mΩ
HBM Class 1C
Top View
D1
D2
G1 ₁
6 D1
S2 2
5 S1
G1
G2
G2 3
4 D2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±12
-2.0
-1.6
-15
0.70
0.45
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
150
185
Maximum Junction-to-Lead
Steady-State
R_θJL
150
Max
180
230
180
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn