AO6800 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Dual N-Channel Enhancement Mode Field Effect Transistor

AO6800
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6800 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
applications.
Features
V_DS (V) = 30V
I_D = 3.4 A
R_DS(ON) < 60mΩ (V_GS = 10V)
R_DS(ON) < 75mΩ (V_GS = 4.5V)
R_DS(ON) < 115mΩ (V_GS = 2.5V)
TSOP6
Top View
D1
D2
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
3.4
2.7
20
1.15
0.73
-55 to 150
Thermal Characteristics each FET
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
78
106
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
64
Max
110
150
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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