AO6422 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6422
20V N-Channel MOSFET
General Description
The AO6422 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for general purpose application.
Features
V_DS = 20V
I_D = 5A
(V_GS = 4.5V)
R_DS(ON) < 44mΩ (V_GS = 4.5V)
R_DS(ON) < 55mΩ (V_GS = 2.5V)
R_DS(ON) < 72mΩ (V_GS = 1.8V)
Top View
D1
6
D
D2
5
D
G3
4S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
5
3.9
I_D
4.2
3
I_DM
30
Power Dissipation ^A
T_A=25°C
T_A=70°C
2.0
1.1
P_D
1.3
0.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
47.5
74
62.5
110
Maximum Junction-to-Lead ^C
Steady State R_θJL
54
68
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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