AO6420 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6420
60V N-Channel MOSFET
General Description
The AO6420 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
V_DS (V) = 60V
I_D = 4.2A (V_GS = 10V)
R_DS(ON) < 60mΩ (V_GS = 10V)
R_DS(ON) < 75mΩ (V_GS = 4.5V)
Top View
D1
D2
G3
6D
5D
4S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A,F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
4.2
3.4
20
2.00
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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