AO6415 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO6415
20V P-Channel MOSFET
General Description
The AO6415 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS= -10V)
R_DS(ON) (at V_GS= -4.5V)
R_DS(ON) (at V_GS= -2.5V)
-20V
-3.3A
< 82mΩ
< 100mΩ
< 140mΩ
Typical ESD protection
HBM Class 2
D
Top View
D1
6
D
D2
5
D
G
G3
4S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±12
-3.3
-2.7
-17
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
82
111
Maximum Junction-to-Lead
Steady-State
R_θJL
56
Max
100
140
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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