AO6409 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO6409, AO6409L
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6409 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
AO6409L ( Green Product ) is offered in a lead-free package.
Features
V_DS (V) = -20V
I_D = -5 A
R_DS(ON) < 45mΩ (V_GS = -4.5V)
R_DS(ON) < 56mΩ (V_GS = -2.5V)
R_DS(ON) < 75mΩ (V_GS = -1.8V)
ESD Rating: 3000V HBM
D
TSOP6
Top View
D 16 D
D 25 D
G 34 S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±8
-5.0
-4.2
-30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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