AO6408 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6408
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 1.8V to12V. It is ESD protected. This device is suitable for
use as a load switch. Standard product AO6408 is Pb- free (meets ROHS & Sony 259 specifications).
AO6408L is a Green Product ordering option. _{AO6408 and AO6408L are electrically identical.}
Features
V_DS (V) = 20V
I_D = 8.8A
(V_GS = 10V)
R_DS(ON) < 18mΩ (V_GS = 10V)
R_DS(ON) < 20mΩ (V_GS = 4.5V)
R_DS(ON) < 25mΩ (V_GS = 2.5V)
R_DS(ON) < 32mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
TSOP-6
D
Top View
D 16 D
D ²⁵ D
G ³⁴ S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
8.8
7
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
47.5
74
37
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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