AO5804E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO5804E
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO5804E/L uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. AO5804E and AO5804EL are electrically identical.
-RoHS Compliant
-AO5804EL is Halogen Free
Features
V_DS (V) = 20V
I_D = 0.5 A (V_GS = 4.5V)
R_DS(ON) < 0.55Ω (V_GS = 4.5V)
R_DS(ON) < 0.68Ω (V_GS = 2.5V)
R_DS(ON) < 0.80Ω (V_GS = 1.8V)
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
Current ^{A, F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
0.5
0.5
0.5
0.45
3
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
0.38
0.28
0.24
0.18
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
275
360
300
Max
330
450
350
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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