AO5800E Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO5800E
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO5800E uses advanced trench technology to provide excellent R_DS(ON) , low gate charge, and
operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
variety of applications, including load switching, lowcurrent inverters and low current DC-DC converters.
RoHS compliant
Features
V_DS (V) = 60V
I_D = 0.4A (VGS = 10V)
R_DS(ON) < 1.6Ω (V_GS = 10V)
R_DS(ON) < 1.9Ω (V_GS = 4.5V)
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^{A, F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
0.4
0.3
1.6
0.4
0.24
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
275
360
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
300
Max
330
450
350
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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