AO4940 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4940
Asymmetric Dual N-Channel MOSFET
General Description
The AO4940 uses advanced trench technology to provide excellent R_{DS(ON) and low gate charge. The two MOSFETs}
make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.A
monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
Features
FET1
V_DS (V) = 30V
I_D = 9.1A
R_DS(ON) < 15mΩ
R_DS(ON) < 23mΩ
FET2
V_DS(V) = 30V
I_D=7.8A
(V_GS = 10V)
< 21mΩ
(V_GS = 10V)
< 32mΩ
(V_GS = 4.5V)
Top View
D2 1
8
D2 2
7
G1 3
6
S1 4
5
G2
S2/D1
S2/D1
S2/D1
D1
D2
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G1
G2
S1
S2
FET1
FET2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Max FET1
Max FET2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
Avalanche Current ^B
Repetitive avalanche energy L=0.3mH ^B
Power Dissipation^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_DSM
I_DM
I_AR
E_AR
P_DSM
T_J, T_STG
10 sec Steady-State
30
±20
9.1
7.6
7.3
6.1
100
17
43
2
1.4
1.3
0.9
-55 to 150
10 sec Steady-State
30
±20
7.8
6.5
6.3
5.2
64
9
12
2
1.4
1.3
0.9
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
Thermal Characteristics FET2
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
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