AO4916 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4916, AO4916L
N-Channel Enhancement Mode Field
Effect Transistor with Schcttky Diode
General Description
The AO4916 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost
efficiency further. AO4916L ( Green Product ) is offered in a lead-free package.
Features
V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17mΩ (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D1
D2
D2 1 8
D2 2 7
G1 3 6
S1/A 4 5
SOIC-8
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
A
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
30
±20
8.5
6.6
40
2
1.28
-55 to 150
Schottky
30
3
2
40
2
1.28
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
48
74
35
47.5
71
32
Max
Units
62.5
110
°C/W
40
62.5
110
°C/W
40
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