AO4904 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4904
Dual N-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4904 uses advanced trench technology to provid excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further
Standard Product AO4904 is Pb-free (meets ROHS & Sony 259 specifications). AO4904L is a Green Product
ordering option. AO4904 and AO4904L are electrically _identical.
Features
V_DS (V) = 30V
I_D = 6.9A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
S2 1 8 D2
G2 2 7 D2
S1/A 3 6 D1/K
G1 4 5 D1/K
SOIC-8
D1
K
A
G1
S1
D2
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
Drain-Source Voltage
V_DS
30
V
Gate-Source Voltage
V_GS
±12
V
Continuous Drain Current^A
Pulsed Drain Current ^B
Schottky reverse voltage
T_A=25°C
T_A=70°C
I_D
6.9
5.8
I_DM
40
V_KA
A
30
V
Continuous Forward Current^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
I_F
I_FM
3
2
A
40
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.44
2
W
1.44
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
-55 to 150
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Maximum Junction-to-Lead ^C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Maximum Junction-to-Lead ^C
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
48
74
35
47.5
71
32
Max
Units
62.5
110
°C/W
40
62.5
110
°C/W
40
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