AO4902 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4902
Dual N-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4902 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The two identical
MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole
applications, for e.g. DDR memory.Standard Product _{AO4902 is Pb-free (meets ROHS & Sony 259}
specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical.
Features
V_DS (V) = 30V
I_D = 6.9A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D1
D2
S2/A2 1 8 D2/K2
G2 2 7 D2/K2
S1/A1 3 6 D1/K1
G1 4 5 D1/K1
SOIC-8
K1
K2
G1
A1
G2
A2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
Pulsed Forward Current^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
30
±12
6.9
5.8
40
2
1.44
-55 to 150
Schottky
30
3
2
40
2
1.44
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
48
74
35
47.5
71
32
Max
62.5
110
40
62.5
110
40
Units
°C/W
°C/W
1/5
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