AO4852 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 60V Dual N-Channel MOSFET

AO4852
60V Dual N-Channel MOSFET
General Description
The AO4852 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. As a pair
these MOSFETs operate very efficiently in Push Pull and Bridge topologies.
Features
V_DS (V) = 60V
I_D = 3.5A
(V_GS = 10V)
R_DS(ON) <90mΩ (V_GS = 10V)
R_DS(ON) <105mΩ (V_GS = 4.5V)
SOIC-8
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 ^D2
6 D1
5 D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain ^TA^=25°C
3.5
3
Current ^A
T_A=70°C
I_D
2.8
2.4
Pulsed Drain Current ^B
I_DM
20
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2
1.4
1.3
0.9
8
9.6
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
Max
48
62.5
74
90
33
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
1/4
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