AO4850 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4850
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4850 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The two MOSFETs
may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 ^{specifications).}
Features
V_DS (V) = 75V
I_D = 3.1A
(V_GS = 10V)
R_DS(ON) < 130mΩ (V_GS = 10V)
R_DS(ON) < 165mΩ (V_GS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
V_GS
±25
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
3.1
2.3
2.4
1.8
15
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2
1.1
1.3
0.7
10
15
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
Max
50
62.5
82
110
41
50
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
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